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SIBERIAN JOURNAL OF PHYSICS

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Vol 18, No 2 (2023)
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RADIOPHYSICS AND ELECTRONICS

5-15 124
Abstract

The principles of operation of the main blocks of the radio spectrometer of the millimeter range for the study of the ozone layer are presented. Some results of measurements of the altitude distribution of ozone over the region of Central Asia are presented, according to which the zones of maximum ozone concentration in height are confirmed, and total ozone is determined in the altitude range of 20‑60 km.

HIGH-ENERGY AND ACCELERATOR PHYSICS, PHYSICS OF HIGH-TEMPERATURE PLASMA

16-25 148
Abstract

A scheme of an autocorrelator developed for measuring the duration of picosecond pulses of infrared radiation from the 3rd Novosibirsk Free Electron Laser is presented, as well as the results of approbation of the autocorrelator when measuring the duration of picosecond pulses in the visible range.

26-35 151
Abstract

At the FAIR (Facility for Antiproton and Ion Research, Darmstadt, Germany) accelerator complex under construction,  one of the key experiments is the PANDA experiment. The main field of the PANDA spectrometer is provided by a  superconducting solenoid. The energy of the magnetic field stored in a superconducting solenoid reaches 22 MJ at an  operating current of 5100 A. In the case of the transition of the superconducting cable used for the solenoid winding  into a resistive state, the safe extraction of stored energy is required to protect the magnet. The energy extraction system  proposed by the authors provides energy dissipation inside the external dump resistor, and not in the section of the superconducting cable that has passed into resistive state, while preventing its damage. The most critical elements of the  energy extraction system are the current breaker, with the help of which the dump resistor is introduced into the power  circuit of the superconducting solenoid, and the dump resistor itself. A modernized three-phase circuit breaker was  chosen as current breaker. A unique design of the energy extraction system including dump resistor with a low parasitic  inductance has been developed.

36-45 147
Abstract

A source of negative hydrogen ions based on the recharging of a beam of positive ions in a gas target is being developed  at the Institute of Nuclear Physics. G.I. Budker SB RAS. The charge exchange source can be used to inject into the  tandem accelerator a neutron source intended for boron neutron capture therapy. One of the important elements of the  source is the plasma emitter, which creates positive ions for primary acceleration. As an emitter, a high-frequency driver  based on an induction discharge and designed for a multi-second operating mode was chosen. In this work, we measured  the emission characteristics of a high-frequency driver using a moving grid probe. As a result, the parameters necessary  for the use of the driver in a rechargeable source of negative ions have been achieved. The analysis of experimentally  measured thermal loads in the multisecond mode is carried out.

PHYSICS OF A FLUID, NEUTRAL AND IONIZED GASES

46-53 157
Abstract

Experimental results of the interaction of disturbances from two point sources of periodic controlled pulsations in the  supersonic boundary layer of a swept wing at a Mach number of 2 are presented. It is shown that as a result of the summation of disturbances, an interference pattern is formed and, for certain values of the wave numbers, it is possible to  suppress the corresponding components of unstable waves.  

54-65 117
Abstract

The influence of the Mach number and Reynolds number on the stability of the boundary layer with internal heat supply  and homogeneous gas injection through the porous wall is studied. At a fixed Mach numbers, the dependence of perturbation amplification rate on the distance to the plate leading edge is not monotonic. As the Reynolds number increases,  the phase velocity tends to the velocity at the inflection generalizing point. Two-dimensional waves are the most growing in the boundary layer. With increasing Mach number and a fixed distance from the plate, edge there is a strong stabilization of the boundary layer. At M=4 the amplification rate maximum decreases in comparison with the corresponding  value at M=0 by more than an magnitude order, and the length of the stable boundary layer increases by a factor of 2. At  the same time, a frequency at the neutral curve critical point decreases by a factor of about three. It has been establishing  that both in the absence of gas injection through a porous wall and in its presence, the internal heat supply has a stabilizing effect on the boundary layer. Within the adopted model of heat supply at M=3 the degree of amplification decreases  by about one and a half times in comparison with the case without internal heating of the boundary layer

SOLID-STATE AND SEMICONDUCTOR PHYSICS, PHYSICS OF NANOSTRUCTURES

66-75 170
Abstract

In this work, we studied the possibility of using composites based on multi-walled carbon nanotubes (MWCNTs) decorated with silicon (Si) and silicon carbide (SiC) particles as an anode material in lithium-ion current sources. MWCNTSi and MWCNT-SiC composites (with different Si/SiC ratios) were obtained by high-temperature heat treatment of  MWCNT-Si at different temperatures (1040 and 1350 °C). The structure and phase composition of the composites were  characterized by TEM and XRD methods. The determination of the specific capacity of composites as an anode material  was carried out at current densities from 0,05 to 2 A/g.

76-82 157
Abstract

To improve the conversion efficiency of thermoelectric devices, new thermoelectric materials are being searched and studied. The use of materials such as metal chalcogenides in engineering for the creation of converters, thermoelements, and functional electronics elements is of interest. In this regard, it is topical to study the thermophysical properties and the effect of defects on the properties of these materials. The chalcogenides of the metals of the first group have a strong dependence of their properties on the intrinsic defectiveness of the structures. An increase in the degree of imperfection causes a decrease in the phase transition temperature, which is caused by a decrease in the forces of interatomic interaction. An increase in thermal conductivity with an increase in the chalcogen content is due to the prevailing increase in the electronic thermal conductivity over a decrease in the phonon component; the value of the lattice thermal conductivity is affected by the imperfection of the crystal lattice.

EDUCATIONAL AND METHODICAL PROVISION OF TEACHING OF PHYSICS

83-104 273
Abstract

The paper considers the history, stages of formation and development of the Department of Applied Physics of the Faculty of Physics of NSU. The structure of the department, solved and currently solved scientific tasks are described. The results of scientific, pedagogical and innovative activities of the main divisions of the department are considered.

105-117 217
Abstract

The purpose of the article is to develop a theoretically and experimentally substantiated specific laboratory work for studying the anisotropy of the electrical properties of semiconductors within the framework of the curricula of higher educational institutions, for such areas of training as “Physics”, “Technical Physics”, “Radiophysics” and “Electronics and Nanoelectronics”. The relevance of the problem is due to the desire of domestic electronics for technological sovereignty and high requirements for the training of qualified personnel for the production of structures of solid-state functional electronics. Based on the solution of the boundary electrodynamic problem, an expression is obtained for the electric potential in the region of a thin rectangular semiconductor sample with a tensor character of conductivity. The results of this work is the development of an original laboratory setup for the demonstration and practical study of the anisotropy of the electrical properties of semiconductor crystals. The proposed technique makes it possible to determine the main electrokinetic parameters of an anisotropic semiconductor – specific conductivity, concentration and Hall mobility of the main charge carriers. A schematic diagram of the installation and formulas for calculating the errors of the measured quantities are proposed. The results obtained may also be of scientific interest in the study of anisotropic semiconductor materials in laboratory conditions.



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ISSN 2541-9447 (Print)