Growth of Epitaxial Layers of the Si1-x-yGexSny Solid Solution from a Tin Solution-Melt
https://doi.org/10.25205/2541-9447-2023-18-1-53-60
Abstract
Mono-crystal films of a graded-gap solid solution Si1-x-yGexSny on Si <111>substrates were grown by liquid-phase epitaxy from a limited tin solution-melt in the temperature range 500–1100 °C. The chemical composition of the grown epitaxial films was determined using a scanning electron microscope.
About the Author
A. Sh. Razzokov
Urgench State University
Uzbekistan
Uzbekistan
Alijon Sh. Razzokov, Candidate of Physical and Mathematical Sciences, Associate Professor,
Urgench State University
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Review
For citations:
Razzokov A.Sh. Growth of Epitaxial Layers of the Si1-x-yGexSny Solid Solution from a Tin Solution-Melt. SIBERIAN JOURNAL OF PHYSICS. 2023;18(1):53-60. (In Russ.) https://doi.org/10.25205/2541-9447-2023-18-1-53-60
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