Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex
https://doi.org/10.25205/2541-9447-2020-15-2-84-91
Abstract
The article shows the selection of the optimal process regime for the growth of epitaxial layers of Si1–xGex solid solutions from tin and gallium solution – melt on a Si<111> substrate, with the lowest dislocation densities that we experimentally achieved. An exponential relationship was found between the values of the dislocation density and the film thickness.With a smooth variable composition of the structure, respectively, by smoothly changing the lattiece parameters of the graded-gap solid solution, structurally perfect epitaxial layers Si1–xGex (0 < x < 1) were obtained.
Keywords
Supporting agencies: The work was carried out under the grant FA-F2-003 of the Academy of Sciences of the Republic of Uzbekistan: “Photo-, thermoelectric and radiative effects in multicomponent solid solutions with nanocrystals based on molecules of elementary semi-conductors and semiconductor compounds”
About the Authors
A. S. Saidov
Physics and Technology Institute named after S. V. Starodubtsev AS RUz
Uzbekistan
Uzbekistan
Amin S. Saidov, Doctor of Science of Physical and Mathematical Sciences, Professor
Ташкент
A. Sh. Razzokov
Urgench State University
Uzbekistan
Uzbekistan
Alozhon Sh. Razzakov, Candidate of Science of Physical and Mathematical Sciences, Associate Professor
Urgench
References
1. Elham M. T.,Fadaly, Alain Dijkstra, Jens Renè Suckert, Dorian Ziss, Marvin A. J. van Tilburg, Chenyang Mao, Yizhen Ren, Victor T. van Lange, Ksenia Korzun, Sebastian Kölling, Marcel A. Verheijen, David Busse, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Julian Stangl, Jonathan J. Finley, Silvana Botti, Jos E. M. Haverkort & Erik P. A. M. Bakkers. Direct-bandgap emission from hexagonal Ge and SiGe alloys. Nature, 2020, no. 580, p. 205–209.
2. Kwang-Won Jo, Wu-Kang Kim, Mitsuru Takenaka, and Shinichi Takagi. Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method. Appl. Phys. Lett., 2019, no. 114, p. 062101.
3. Timofeev V. A. Morphology and surface structure at the initial stages of growth GeSi and GeSiSn on Si (100): Dis. Cand. physical-mat. sciences. Novosibirsk, 2014. (in Russ.)
4. Saidov A. S., Usmanov Sh. N., Kalanov M. U., Kurmantayev A. N., Bakhtibaev A. N. Structural and some electrophysical properties of the Si1–x – Snx solid solution. Solid-solution physics, 2013, vol. 55, no. 1, p. 36–43. (in Russ.)
5. Sapaev B., Saidov A. S. Investigation of some properties of Si – Si1–x Gex structures (0 ≤ x ≤ 1) grown from a limited tin solution-melt by liquid phase epitaxy. Physics and technology of semiconductors, 2005, vol. 39, no. 10, p. 1183–1188. (in Russ.)
6. Saidov A. S., Usmanov Sh. N., Kholikov K. T., Saparov D. Obtaining and research continuous solid solution Si – (Si2)1-x-e (Ge2)x (GaAs)y. Technical Physics Letters, 2007, vol. 33, no. 16, p. 59–64. (in Russ.)
7. Andreev V. M., Dolginov L. M., Tretyakov D. N. Liquid epitaxy in technology semiconductor devices. Moscow, Sovetskoe radio Publ., 1975. (in Russ.)
8. Saidov A. S., Saidov M. S., Koshchanov E. A. Liquid epitaxy compensated layers of gallium arsenide and solid solutions based on it. Monograph. Tashkent, Science, 1986, 128 p. (in Russ.)
9. Alfimova D. L., Lunin L. S., Lunina M. L., Arustamyan D. A., Kazakova A. E., CheboTarev S. N. Growth and Properties of Isoparametric InAlGaPAs Heterostructures /Ga As. Physics and technology of semiconductors, 2017, vol. 51, iss. 10, p. 1426–1433. (in Russ.)
Review
For citations:
Saidov A.S., Razzokov A.Sh. Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex. SIBERIAN JOURNAL OF PHYSICS. 2020;15(2):84-91. (In Russ.) https://doi.org/10.25205/2541-9447-2020-15-2-84-91
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