For citations:

Rodyakina E.E., Sitnikov S.V., Rogilo D.I., Latyshev A.V. Rearrangement of Atomic Steps on the Silicon (001) Surface at Sublimation under Heating by Direct Electric Current. SIBERIAN JOURNAL OF PHYSICS. 2018;13(4):60-66. (In Russ.) https://doi.org/10.25205/2541-9447-2018-13-4-60-66