POROUS Ge LAYER FORMATION AND THEIR STUDY BY OPTICAL METHODS
https://doi.org/10.25205/2541-9447-2018-13-3-78-81
Abstract
Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2 heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO2 heterolayers. In the porous germanium films formed the sizes of the Ge nanocrystals were decreased due to oxidation in air and resonance Raman scattering appeared. Resonance Raman scattering was accompanied by photoluminescence (PL) (bands in the range of 2.1-2.5 eV and 1.5-1.7 eV) excited by a laser with quantum energy of 2.6 eV at room temperature. PL signals in the range of 2.1-2.5 eV can be explained by high-energy transitions in Ge nanocrystals.
About the Authors
E. B. Gorokhov
Institute of Semiconductor Physics SB RAS
Russian Federation
Russian Federation
K. N. Astankova
Institute of Semiconductor Physics SB RAS
Russian Federation
Russian Federation
V. A. Volodin
Institute of Semiconductor Physics SB RAS; Novosibirsk State University
Russian Federation
Russian Federation
A. Yu. Kravtsova
Novosibirsk State Technical University
Russian Federation
Russian Federation
A. V. Latyshev
Institute of Semiconductor Physics SB RAS; Novosibirsk State University
Russian Federation
Russian Federation
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Review
For citations:
Gorokhov E.B., Astankova K.N., Volodin V.A., Kravtsova A.Yu., Latyshev A.V. POROUS Ge LAYER FORMATION AND THEIR STUDY BY OPTICAL METHODS. SIBERIAN JOURNAL OF PHYSICS. 2018;13(3):78-81. (In Russ.) https://doi.org/10.25205/2541-9447-2018-13-3-78-81
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