Thermoelectric Properties of Chalcogenide Semiconductor Compounds and Conversion Process Efficiency
https://doi.org/10.25205/2541-9447-2024-19-1-89-96
Abstract
Achieving a maximum thermoelectric figure of merit causes an increase in the efficiency of conversion processes by improving the thermoelectric properties of the material. In this regard, it is relevant to study the thermoelectric efficiency of chalcogenide semiconductor compounds and the efficiency of the conversion process of film converters based on them. The position of the maximum value of thermoelectric efficiency is predetermined by the scattering parameters and the ratio of the mobilities and effective masses of charge carriers. Increasing the thermoelectric efficiency of the material is achieved by optimizing the thermoelectric parameters by improving the properties, which leads to optimization of the concentration of charge carriers. Improving the thermoelectric properties of the material and increasing the efficiency of conversion processes is ensured when the concentration corresponds to the optimal value. The use of film transducers provides information in the process of monitoring and measuring physical quantities, as well as in the manufacture of high-tech products.
Keywords
About the Authors
D. G. Mustafaeva
North Caucasus Mining and Metallurgical Institute (State Technological University)
Russian Federation
Russian Federation
Dzhamilya G. Mustafaeva - Candidate of Technical Sciences
Vladikavkaz
T. T. Magkoev
North Ossetian State University named after K. L. Khetagurova
Russian Federation
Russian Federation
Tamerlan T. Magkoev - Doctor of Physical and Mathematical Sciences
Vladikavkaz
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Review
For citations:
Mustafaeva D.G., Magkoev T.T. Thermoelectric Properties of Chalcogenide Semiconductor Compounds and Conversion Process Efficiency. SIBERIAN JOURNAL OF PHYSICS. 2024;19(1):89-96. (In Russ.) https://doi.org/10.25205/2541-9447-2024-19-1-89-96
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