Near-Field Photoluminescence of WS2 and MoS2 Monolayers, Grown by Chemical Vapor Deposition
I. A. Milekhin,
N. N. Kurus,
L. S. Basalaeva,
A. G. Milekhin,
E. O. Chiglincev,
A. I. Chernov,
A. V. Latyshev https://doi.org/10.25205/2541-9447-2023-18-4-94-103
Abstract
Monolayer triangular WS2 and MoS2 islands grown by chemical vapor deposition was investigated by near-field photoluminescence (nano-PL) enhanced by the metallized atomic force microscope (AFM) tip. To achieve maximum near-field response from WS2 and MoS2 materials fabricated Au and Ag metallized AFM tips were used. Maximum nano-PL responds from the islands is observed under the resonant conditions when the energy of the localized surface plasmon of the metallized probe coincides with the energy of the exciton luminescence of the WS2 and MoS2 materials. Nano-PL mapping of the exciton response allows visualizing structural defects and determine the local thickness changes of monolayer islands with nanometer spatial resolution.
Keywords
transition metal dichalcogenides (TMDs),
tungsten disulfide (WS2),
molybdenum disulfide (MoS2),
near-field photoluminescence enhanced by metallized probe tip (nano-PL),
atomic force microscopy (AFM)
Supporting agencies: The work was financially supported by the Ministry of Science and Higher Education of the Russian Federation, project No. 075-15-2020-797 (13.1902.21.0024). The authors are grateful to A.S. Medvedev and L.A. Nenasheva for manufacturing probes for nano-PL experiments.
About the Authors
I. A. Milekhin
Institute of Semiconductor Physics named after A. V. Rzhanova SB RAS; Novosibirsk State University
Russian Federation
Russian Federation
Ilya A. Milekhin, PhD, Junior Researcher
N. N. Kurus
Institute of Semiconductor Physics named after A. V. Rzhanova SB RAS
Russian Federation
Russian Federation
Nina N. Kurus, Junior Researcher
L. S. Basalaeva
Institute of Semiconductor Physics named after A. V. Rzhanova SB RAS
Russian Federation
Russian Federation
Lyudmila S. Basalaeva, Junior Researcher
A. G. Milekhin
Institute of Semiconductor Physics named after A. V. Rzhanova SB RAS
Russian Federation
Russian Federation
Alexander G. Milekhin, Doctor of Sciences, Associate Professor
E. O. Chiglincev
Moscow Institute of Physics and Technology (National Research University); Russian Quantum Center
Russian Federation
Russian Federation
Emil O. Chiglincev, Junior Researcher
A. I. Chernov
Moscow Institute of Physics and Technology (National Research University)
Russian Federation
Russian Federation
Alexander I. Chernov, Doctor of Sciences
A. V. Latyshev
Institute of Semiconductor Physics named after A. V. Rzhanova SB RAS; Novosibirsk State University
Russian Federation
Russian Federation
Alexander V. Latyshev, Doctor Sciences, Academician of SB RAS
References
1. Kuc A., Zibouche N., and Heine T. Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2. Phys. Rev. B, 2011, no. 83, p. 245213, DOI: 10.1103/PhysRevB.83.245213.
2. Zhao W., Ghorannevis Z., Chu L., Toh M., Kloc C., Tan P.-H., and Eda G. Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2. ACS Appl. Nano Mater., 2013, no. 1, pp. 791–797.
3. Zeng H., Liu G., Dai J., Yan Y., Zhu B., He R., Xie L., and Xu S. Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides. Sci. Rep., 2013, vol. 3, p. 1608, 2013, DOI: 10.1038/srep01608.
4. Splendiani A., Sun L., Zhang Y., Li T., Kim J., Chim C., Galli G., and Wang F. Emerging Photoluminescence in Monolayer MoS2. Nano Lett., 2010, vol. 10, pp. 1271–1275, DOI: 10.1021/nl903868w.
5. Nazif K. N., Daus A., Hong J., Lee N., Vaziri S., Kumar A., Nitta F., Chen M. E., Kananian S., Islam R., Kim K., Park J., Poon A. S. Y., Brongersma M. L., Pop E., and Saraswat K. C. High-specific-power flexible transition metal dichalcogenide solar cells. Nat. Commun., 2021, vol. 12, p. 7034, DOI: 10.1038/s41467-021-27195-7
6. Wang C., Yang F., and Gao Y. Nanoscale Advances transition metal dichalcogenides: from architecture to performance. Nanoscale Adv., 2020, no. 4, pp. 4323–4340, DOI: 10.1039/ d0na00501k.
7. Andrzejewski D., Oliver R., Beckmann Y., Grundmann A., Heuken M., Kalisch H., Vescan A., Kümmell T., and Bacher G. Flexible Large-Area Light-Emitting Devices Based on WS2 Monolayers. Adv. Opt. Mater., 2020, vol. 8, p. 2000694, DOI: 10.1002/adom.202000694.
8. Liu C. and Guo J. Silicon / 2D-material photodetectors : from near- infrared to mid-infrared. Light Sci. Appl., 2021, no. 10, p. 123, DOI: 10.1038/s41377-021-00551-4.
9. Li J., Su W., Chen F., Fu L., Ding S., Song K., Huang X., and Zhang L. Atypical Defect- Mediated Photoluminescence and Resonance Raman Spectroscopy of Monolayer WS 2. J. Phys. Chem. C, 2019, vol. 123, pp. 3900–3907, DOI: 10.1021/acs.jpcc.8b11647.
10. Wang J., Fang H., Wang X., Chen X., Lu W., and Hu W. Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet — Visible to Infrared. Small, 2017, vol. 13, p. 1700894, DOI: 10.1002/smll.201700894.
11. Kotsakidis J. C., Zhang Q., De Parga A. L. V., Currie M., Helmerson K., Gaskill D. K., and Fuhrer M. S. Oxidation of Monolayer WS 2 in Ambient Is a Photoinduced Process, Nano Lett., 2019, vol. 19, p. 5205−5215 Letter, DOI: 10.1021/acs.nanolett.9b01599.
12. Fali A., Zhang T., Terry J. P., Kahn E., Fujisawa K., Kabius B., Koirala S., Ghafouri Y., Zhou D., Song W., Yang L., and Terrones M. Photodegradation Protection in 2D In-Plane Heterostructures Revealed by Hyperspectral Nanoimaging: The Role of Nanointerface 2D Alloys, ACS Nano, 2021, no. 15, p. 2447−2457, DOI: 10.1021/acsnano.0c06148.
13. Su W., Kumar N., Mignuzzi S., Crain J., and Roy D. Nanoscale mapping of excitonic processes in single-layer MoS2 using tip-enhanced photoluminescence microscopy. Nanoscale, 2016, no. 8, pp. 10564–10569, DOI: 10.1039/c5nr07378b.
14. Tuladhar S. M., Kirchartz T., Schroeder B. C., andMcculloch I. Simultaneous topographical, electrical and optical microscopy of optoelectronic devices at the nanoscale. Nanoscale, 2017, vol. 9, pp. 2723–2731, DOI: 10.1039/c6nr09057e.
15. Su W., Kumar N., Shu H., Lancry O., and Chaigneau M. In Situ Visualization of Optoelectronic Behavior of Grain Boundaries in Monolayer WSe 2 at the Nanoscale. J. Phys. Chem. C, 2021, vol. 125, p. 26883−26891, DOI: 10.1021/acs.jpcc.1c08064.
16. Huang T. X., Huang S. C., Li M. H., Zeng Z. C., Wang X., and Ren B.Tip-enhanced Raman spectroscopy: Tip-related issues. Anal. Bioanal. Chem., 2015, vol. 407, no. 27, pp. 8177–8195, DOI: 10.1007/s00216-015-8968-8.
17. Wang X., Huang S. C., Huang T. X., Su H. S., Zhong J. H., Zeng Z. C., Li M. H., and Ren B. Tip-enhanced Raman spectroscopy for surfaces and interfaces. Chem. Soc. Rev., 2017, vol. 46, no. 13, pp. 4020–4041, DOI: 10.1039/c7cs00206h.
18. Farhat P., Olivia M., Legge S., Wang Z., and Sham T. Tip-Enhanced Raman Spectroscopy and Tip-Enhanced Photoluminescence of MoS 2 Flakes Decorated with Gold Nanoparticles. J. Phys. Chem. C, 2022, no. 126, pp. 7086–7095, DOI: 10.1021/acs.jpcc.1c10186.
19. Pan Y. L. H., Milekhin I., Milekhin A. G., and Zahn D. R. T. Competing mechanisms of local photoluminescence quenching and enhancement in the quantum tunneling regime at 2D TMDC/ hBN/plasmonic interfaces. Appl. Phys. Lett., 2023, no. 122, p. 233106, DOI: 10.1063/5.0152050.
20. Milekhin A. G., Rahaman M., Rodyakina E. E., Latyshev A. V., Dzhagan V. M., and Zahn D. R. T. Giant gap-plasmon tip-enhanced Raman scattering of MoS2 monolayers on Au nanocluster arrays. Nanoscale, 2018, vol. 10, no. 6, pp. 2755–2763, DOI: 10.1039/c7nr06640f.
21. Wang J., Han Z., He Z., Wang K., Liu X., and Sokolov A. V. Tip-enhanced photoluminescence of monolayer MoS2 increased and spectrally shifted by injection of electrons. Nanophotonics, 2023, vol. 12, no. 14, pp. 2937–2943, DOI: 10.1515/nanoph-2023-0025.
22. Lee H., Lee D. Y., Kang M. G., Koo Y., Kim T., and Park K. D. Tip-enhanced photoluminescence nano-spectroscopy and nano-imaging. Nanophotonics, 2020, vol. 9, no. 10, pp. 3089–3110, DOI: 10.1515/nanoph-2020-0079.
23. Shen F., Huang H., and Wen S. Generation and Detection of Strain-Localized Excitons in WS2 Monolayer by Plasmonic Metal Nanocrystals. ACS Nano, 2022, vol. 16, no. 10647–10656, DOI: 10.1021/acsnano.2c02300.
24. Chen Y., Song P., Wang C., Zhang M., Hu K., Tian Z., Su W., Chu P. K., Zhang W., and Di Z. A Versatile Approach to Create Nanobubbles on Arbitrary Two-Dimensional Materials for Imaging Exciton Localization, Adv. Mater. Interfaces, 2022, no. 9, p. 2201079, DOI: 10.1002/admi.202201079.
25. Zhang J., Yu Y., Wang P., Luo C., Wu X., Sun Z., Wang J., Da Hu W., and Shen G. Characterization of atomic defects on the photoluminescence in two-dimensional materials using transmission electron microscope. InfoMat, 2019, vol. 1, no. 1, pp. 85–97, DOI: 10.1002/inf2.12002.
26. Okuno Y., Lancry O., Tempez A., Cairone C., Bosi M., Fabbri F., and Chaigneau M. Probing the nanoscale light emission properties of a CVD-grown MoS2 monolayer by tip-enhanced photoluminescence. Nanoscale, 2018, no. 10, pp. 14055–14059, DOI: 10.1039/c8nr02421a.
27. Ferrera M., Rahaman M., Sanders S., Pan Y., Milekhin I., Gemming S., Bisio A. A. F., Canepa M., and Zahn D. R. T. Controlling excitons in the quantum tunneling regime in a hybrid plasmonic/2D semiconductor interface. Appl. Phys. Rev., 2022, vol. 9, p. 031401, DOI: 10.1063/5.0078068.
28. Emitter L., Ws M., Peimyoo N., Shang J., Cong C., Shen X., Wu X., Yeow E. K. L., and Yu T. Nonblinking, Intense Two-Dimensional Light Emitter: Monolayer WS2 Triangles. ACS Nano, 2013, no. 12, pp. 10985–10994.
29. Basalaeva L. S., Kurus N. N., Rodyakina E. E., Anikin K. V., and Milekhin A. G. Fabrication of Au and Ag – Coated AFM Probes for Tip-Enhanced Raman Spectroscopy. J. Phys. Conf. Ser., 2021, vol. 2015, no. 1, p. 012013, DOI: 10.1088/1742-6596/2015/1/012013.
30. Johnson P. B. and Christy R. W. Optical constants of the noble metals. Phys. Rev. B, 1972, vol. 6, no. 12, pp. 4370–4379, DOI: 10.1103/PhysRevB.6.4370.
31. Wang J., Han Z., He Z., Wang K., Liu X., and Sokolov A. V. Tip-enhanced photoluminescence of monolayer MoS2 increased and spectrally shifted by injection. Nanophotonics, 2023, vol. 7278, pp. 1–7, DOI: 10.1515/nanoph-2023-0025.
32. Hong J., Hu Z., Probert M., Li K., Lv D., Yang X., Gu L., Mao N., Feng Q., Xie L., Zhang J., Wu D., Zhang Z., Jin C., Ji W., Zhang X., Yuan J., and Zhang Z. Exploring atomic defects in molybdenum disulphide monolayers. Nat. Commun., 2015, vol. 6, p. 6293, DOI: 10.1038/ncomms7293.
33. Lee C., Jeong B. G., Kim S. H., Kim D. H., Yun S. J., Choi W., An S., Lee D., Kim Y., Kim K. K., Lee S. M., and Jeong M. S. Investigating heterogeneous defects in single-crystalline WS 2 via tip-enhanced Raman spectroscopy. 2D Mater. Appl., 2022, vol. 6, p. 67, DOI: 10.1038/s41699-022-00334-4.
Review
For citations:
Milekhin I.A., Kurus N.N., Basalaeva L.S., Milekhin A.G., Chiglincev E.O., Chernov A.I., Latyshev A.V. Near-Field Photoluminescence of WS2 and MoS2 Monolayers, Grown by Chemical Vapor Deposition. SIBERIAN JOURNAL OF PHYSICS. 2023;18(4):94-103. (In Russ.) https://doi.org/10.25205/2541-9447-2023-18-4-94-103
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