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Analytical and Technological Research Center “High Technologies & Nanostructured Materials”: History, Formation and Achieved Results

https://doi.org/10.25205/2541-9447-2022-17-3-66-88

Abstract

The article provides information about the history of formation, development, main recent activities and achieved results of the Analytical and Technological Research Center of the Faculty of Physics of Novosibirsk State University (ATRC NSU) during its 15 years of operation. The main areas of physical research are: modern materials science, nanomaterials, nanotechnologies and technological processes, experimental diagnostics of structures and substances, development of methods for nanostructures fabrication, computer simulation of low-dimensional structures, improvement of the characteristics of solid-state semiconductor electronics, search for materials for storage and transfer of digital information, study of technological properties of low-dimensional semiconductors, catalysts, metamaterials and organic optoelectronics, study of materials and systems for terahertz electronics. Due to the organization of the Shared Research Facilities “High Technologies and Analytics of Nanosystems” (CCU “VTAN”) within the structure, ATRC successfully cooperates with scientific and educational organizations and with industrial companies of the real sector of the economy in the Siberian region, Russia and neighboring countries. The main part of scientific research is carried out by the staff of the youth Laboratory of Functional Diagnostics of Nanoscale Systems for Nanoelectronics (LabFDNS) that contributes to the involvement of students and young employees of NSU into the implementation of relevant in-demand research work, and thus provides them with a high level of training in their chosen specialty.

About the Authors

P. V. Geydt
Novosibirsk State University
Russian Federation

Pavel V. Geydt, Candidate of Sciences (Physics and Mathematics), head of the laboratory

Novosibirsk



A. V. Arzhannikov
Novosibirsk State University; Budker Institute of Nuclear Physics SB RAS
Russian Federation

Andrey V. Arzhannikov, Doctor of Sciences (Physics and Mathematics), Professor; chief researcher

Novosibirsk



A. L. Aseev
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics SB RAS
Russian Federation

Alexander L. Aseev, Doctor of Sciences (Physics and Mathematics), Academician of RAS; chief researcher

Novosibirsk



A. A. Shklyaev
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics SB RAS
Russian Federation

Alexander A. Shklyaev, Doctor of Sciences (Physics and Mathematics); сhief researcher

Novosibirsk



V. A. Volodin
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics SB RAS
Russian Federation

Vladimir A. Volodin, Doctor of Sciences (Physics and Mathematics), Docent; leading researcher

Novosibirsk



I. A. Azarov
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics SB RAS
Russian Federation

Ivan A. Azarov, Junior Researcher

Novosibirsk



V. I. Zaikovskii
Novosibirsk State University; Boreskov Institute of Catalysis SB RAS
Russian Federation

Vladimir I. Zaikovskii, Candidate of Sciences (Chemistry), senior researcher

Novosibirsk



D. E. Utkin
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics SB RAS
Russian Federation

Dmitriy E. Utkin, junior researcher

Novosibirsk



Yu. V. Larichev
Novosibirsk State University; Boreskov Institute of Catalysis SB RAS
Russian Federation

Yurii V. Larichev, Candidate of Sciences (Chemistry), researcher,

Novosibirsk



S. Y. Chepkasov
Novosibirsk State University
Russian Federation

Sergey Y. Chepkasov, junior researcher

Novosibirsk



S. A. Kuznetsov
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics SB RAS
Russian Federation

Sergey A. Kuznetsov, senior researcher

Novosibirsk



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For citations:


Geydt P.V., Arzhannikov A.V., Aseev A.L., Shklyaev A.A., Volodin V.A., Azarov I.A., Zaikovskii V.I., Utkin D.E., Larichev Yu.V., Chepkasov S.Y., Kuznetsov S.A. Analytical and Technological Research Center “High Technologies & Nanostructured Materials”: History, Formation and Achieved Results. SIBERIAN JOURNAL OF PHYSICS. 2022;17(3):66-88. (In Russ.) https://doi.org/10.25205/2541-9447-2022-17-3-66-88

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