Department of Semiconductor Physics of the Physics Department at Novosibirsk State University

V. L. Alperovich; Z. D. Kvon; A. V. Latyshev

SIBERIAN JOURNAL OF PHYSICS
SIBERIAN JOURNAL OF PHYSICS

ISSN 2541-9447 (Print)

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Alperovich V.L., Kvon Z.D., Latyshev A.V. Department of Semiconductor Physics of the Physics Department at Novosibirsk State University. SIBERIAN JOURNAL OF PHYSICS. 2022;17(1):104-117. (In Russ.) https://doi.org/10.25205/2541-9447-2022-17-1-104-117

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ISSN 2541-9447 (Print)

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About the Authors

V. L. Alperovich
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Russian Federation

Vitaly L. Alperovich, Doctor of Science (Physics and Mathematics), Professor

Novosibirsk

Z. D. Kvon
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Russian Federation

Ze Don Kvon, Doctor of Science (Physics and Mathematics), Professor

Novosibirsk

A. V. Latyshev
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Russian Federation

Alexander V. Latyshev, Doctor of Science (Physics and Mathematics), Academician of Russian Academy of Sciences

Novosibirsk

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