<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">nguphys</journal-id><journal-title-group><journal-title xml:lang="ru">Сибирский физический журнал</journal-title><trans-title-group xml:lang="en"><trans-title>SIBERIAN JOURNAL OF PHYSICS</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2541-9447</issn><publisher><publisher-name>Новосибирский государственный университет</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.25205/2541-9447-2019-14-1-77-85</article-id><article-id custom-type="elpub" pub-id-type="custom">nguphys-82</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИКА ТВЕРДОГО ТЕЛА, ПОЛУПРОВОДНИКОВ, НАНОСТРУКТУР</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>SOLID-STATE AND SEMICONDUCTOR PHYSICS, PHYSICS OF NANOSTRUCTURES</subject></subj-group></article-categories><title-group><article-title>Критический размер террасы кремния (001) для зарождения вакансионных островков при высокотемпературном отжиге</article-title><trans-title-group xml:lang="en"><trans-title>Critical Terrace Width for Vacancy Islands Nucleation on Wide Terrace of Silicon (001) Surface under High Temperature Annealing</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-4940-7074</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Родякина</surname><given-names>Е. Е.</given-names></name><name name-style="western" xml:lang="en"><surname>Rodyakina</surname><given-names>E. E.</given-names></name></name-alternatives><email xlink:type="simple">rodyakina@isp.nsc.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-2398-8272</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ситников</surname><given-names>С. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Sitnikov</surname><given-names>S. V.</given-names></name></name-alternatives><email xlink:type="simple">sitnikov@isp.nsc.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Латышев</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Latyshev</surname><given-names>A. V.</given-names></name></name-alternatives><email xlink:type="simple">latyshev@isp.nsc.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Институт физики полупроводников им. А. В. Ржанова СО РАН; овосибирский государственный университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>A. V. Rzhanov Institute of Semiconductor Physics SB RAS; Novosibirsk State University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Институт физики полупроводников им. А. В. Ржанова СО РАН</institution><country>Россия</country></aff><aff xml:lang="en"><institution>A. V. Rzhanov Institute of Semiconductor Physics SB RAS</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2019</year></pub-date><pub-date pub-type="epub"><day>08</day><month>11</month><year>2020</year></pub-date><volume>14</volume><issue>1</issue><fpage>77</fpage><lpage>85</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Родякина Е.Е., Ситников С.В., Латышев А.В., 2020</copyright-statement><copyright-year>2020</copyright-year><copyright-holder xml:lang="ru">Родякина Е.Е., Ситников С.В., Латышев А.В.</copyright-holder><copyright-holder xml:lang="en">Rodyakina E.E., Sitnikov S.V., Latyshev A.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nguphys.elpub.ru/jour/article/view/82">https://nguphys.elpub.ru/jour/article/view/82</self-uri><abstract><p>С применением in situ метода сверхвысоковакуумной отражательной электронной микроскопии исследован процесс формирования на поверхности кремния (001) системы концентрических ступеней, разделенных широкими террасами. Показана возможность управления шириной террас с помощью компенсации сублимации внешним потоком атомов. Измерены температурные зависимости критического диаметра террас для зарождения нового вакансионного островка в интервале температур 1 070-1 160 °С в двух направлениях - вдоль и поперек димерных рядов атомов сверхструктуры (1 × 2). Продемонстрировано увеличение критического диаметра с ростом потока атомов. Установлено, что с увеличением температуры анизотропия критического размера уменьшается и при температурах выше 1 125 °С критический размер террасы вдоль и поперек димерных рядов атомов в пределах погрешности совпадает. В рамках атомистической теории зарождения круглого двумерного островка определена кинетика зарождения островков, оценены величины критического зародыша, энергии связи в зародыше и разницы энергий диффузии вдоль и поперек димерных рядов.</p></abstract><trans-abstract xml:lang="en"><p>The process of forming a system of concentric steps on the silicon (001) surface, separated by wide terraces, has been studied in situ by means of ultrahigh vacuum reflection electron microscopy. The possibility of controlling terraces width by compensating atoms sublimation by an external atoms flux has been shown. The temperature dependences of the critical diameter of the terraces for the nucleation of a new vacancy island have been measured in along and across dimer row of superstructure 1 × 2 direction in the temperature range 1 070-1 160 °C. The increase in the critical diameter with increasing atomic flux has been demonstrated. The anisotropy of a critical terrace size decreases with an increase in temperature independently of deposition flux and the critical size of the terrace along and across the dimer row coincides with an error accuracy at temperatures above 1 125 °C. The kinetics of vacancy islands nucleation has been determined in the framework atomic nucleation theory, and the values of the critical nucleus, the binding energy in the nucleus and the difference of diffusion energies along and across dimer rows have been estimated.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>атомные процессы</kwd><kwd>поверхность</kwd><kwd>вакансии</kwd><kwd>кремний (001)</kwd><kwd>широкие террасы</kwd></kwd-group><kwd-group xml:lang="en"><kwd>atomic process</kwd><kwd>surface</kwd><kwd>vacancy</kwd><kwd>silicon (001)</kwd><kwd>wide terrace</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
