nguphysСибирский физический журналSIBERIAN JOURNAL OF PHYSICS2541-9447Новосибирский государственный университет10.25205/2541-9447-2018-13-4-74-90nguphys-66Research ArticleФИЗИКА ТВЕРДОГО ТЕЛА, ПОЛУПРОВОДНИКОВ, НАНОСТРУКТУРSOLID-STATE AND SEMICONDUCTOR PHYSICS, PHYSICS OF NANOSTRUCTURESПрохождение электрона через туннельный плавный барьер в высокочастотном полеElectron Transmission through a Smooth Tunnel Barrier in High-Frequency FieldТкаченкоО. А.TkachenkoO. A.otkach@list.ruТкаченкоВ. А.TkachenkoV. A.vtkach@isp.nsc.ruБакшеевД. Г.BaksheyevD. G.d.baksheev@g.nsu.ruИнститут физики полупроводников им. А. В. Ржанова СО РАНРоссияA. V. Rzhanov Institute of Semiconductor Physics SB RASRussian FederationИнститут физики полупроводников им. А. В. Ржанова СО РАН; Новосибирский государственный университетРоссияA. V. Rzhanov Institute of Semiconductor Physics SB RAS; Novosibirsk State UniversityRussian FederationНовосибирский государственный университетРоссияNovosibirsk State UniversityRussian Federation2018261020201347490Copyright © Ткаченко О.А., Ткаченко В.А., Бакшеев Д.Г., 20202020Ткаченко О.А., Ткаченко В.А., Бакшеев Д.Г.Tkachenko O.A., Tkachenko V.A., Baksheyev D.G.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nguphys.elpub.ru/jour/article/view/66

Численно изучено фотонно-ассистированное прохождение электрона через одномерный плавный барьер, моделирующий потенциал в нижней энергетической подзоне квантового точечного контакта. Показано, что на зависимостях коэффициента прохождения от энергии присутствуют плечеобразные особенности, которые на частотных зависимостях трансформируются в максимумы. Особенности вызваны переходами в канал с энергией, близкой к вершине барьера, при поглощении одного, двух или трех фотонов, и их положение не зависит от амплитуды высокочастотного поля. С понижением частоты фотон-индуцированные ступени исчезают, но в производной коэффициента прохождения от энергии остаются два пика, равноотстоящие по энергии от средней высоты барьера на амплитуду колебаний высоты барьера. Найденные особенности предлагается наблюдать экспериментально при облучении полупроводниковой структуры с квантовым точечным контактом на частотах 0,01-1,7 ТГц.

The photon-assisted transmission of an electron through a smooth one-dimensional barrier that simulates the potential in the lower energy subband of the quantum point contact is numerically studied. The dependence of the transmission coefficient on energy shows shoulder-like features, that frequency dependence transforms into maxima. The features are caused by transitions into a channel with the energy close to the top of the barrier when one, two or three photons are absorbed, and their position does not depend of the amplitude of the high-frequency field. With decreasing frequency, the photon-induced steps disappear, but the derivative of the transmission coefficient on energy shows two peaks placed at points lower and higher average height of the barrier on the value equal the amplitude of oscillations. The discovered features can be observed experimentally upon irradiation of a semiconductor structure with a quantum point contact at frequencies 0.01-1.7 THz.

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