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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">nguphys</journal-id><journal-title-group><journal-title xml:lang="ru">Сибирский физический журнал</journal-title><trans-title-group xml:lang="en"><trans-title>SIBERIAN JOURNAL OF PHYSICS</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2541-9447</issn><publisher><publisher-name>Новосибирский государственный университет</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.25205/2541-9447-2018-13-4-67-73</article-id><article-id custom-type="elpub" pub-id-type="custom">nguphys-65</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИКА ТВЕРДОГО ТЕЛА, ПОЛУПРОВОДНИКОВ, НАНОСТРУКТУР</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>SOLID-STATE AND SEMICONDUCTOR PHYSICS, PHYSICS OF NANOSTRUCTURES</subject></subj-group></article-categories><title-group><article-title>Влияние имплантации ионов углерода на адгезию и свойства аморфных углеродных пленок на германии</article-title><trans-title-group xml:lang="en"><trans-title>Influence of the Carbon Ion Implantation on the Adhesion and Properties of Amorphous Carbon Films on Germanium</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Золкин</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Zolkin</surname><given-names>A. S.</given-names></name></name-alternatives><email xlink:type="simple">zolkinas@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Семерикова</surname><given-names>А. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Semerikova</surname><given-names>A. I.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Чепкасов</surname><given-names>С. Ю.</given-names></name><name name-style="western" xml:lang="en"><surname>Chepkasov</surname><given-names>S. Yu.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Хомяков</surname><given-names>М. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Khomyakov</surname><given-names>M. N.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Новосибирский государственный университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Novosibirsk State University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Институт лазерной физики СО РАН</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Institute of Laser Physics SB RAS</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2018</year></pub-date><pub-date pub-type="epub"><day>26</day><month>10</month><year>2020</year></pub-date><volume>13</volume><issue>4</issue><fpage>67</fpage><lpage>73</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Золкин А.С., Семерикова А.И., Чепкасов С.Ю., Хомяков М.Н., 2020</copyright-statement><copyright-year>2020</copyright-year><copyright-holder xml:lang="ru">Золкин А.С., Семерикова А.И., Чепкасов С.Ю., Хомяков М.Н.</copyright-holder><copyright-holder xml:lang="en">Zolkin A.S., Semerikova A.I., Chepkasov S.Y., Khomyakov M.N.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nguphys.elpub.ru/jour/article/view/65">https://nguphys.elpub.ru/jour/article/view/65</self-uri><abstract><p>Предложен метод синтеза аморфных гидрогенизированных (a-C:H) пленок углерода с высокой адгезией, основанный на имплантации ионов углерода в подложку из монокристаллического германия. Поток ионизированного углерода создавался источником ионов с азимутальным дрейфом электронов в скрещенных электрическом и магнитном полях. В область с повышенной концентрацией электронов вводили газ пропан. Расход газа - от 4,5 до 10 см3/мин. Ионизованные фрагменты пропана, включая углерод, ускорялись электрическим полем и осаждались на подложку. При этом ионизированный углерод внедрялся в поверхностный слой германия, создавая переходную область, обеспечивающую сцепление с напыляемой пленкой. Подложка предварительно обрабатывалась ионами аргона в течение нескольких минут. Синтез покрытия включает двух-этапное осаждение. На первом этапе пленки осаждались ионным пучком со средней энергией около 1,6 кэВ в течение от 0,5 до 1 часа для получения адгезионного слоя. Затем средняя энергия пучка уменьшалась до 0,3 кэВ, и осаждение продолжалось в течение 3,5 часов для сохранения твердости покрытий. Скорость роста покрытий составила 1,8 нм/мин при осаждении из ионных пучков со средней энергией 0,3 кэВ и 7,8 нм/мин при средней энергии пучка 1,6 кэВ. Адгезия, связь покрытия с подложкой высокая: отрыв отсутствует при скрайбировании алмазным наноиндентором Берковича с нагрузкой до 50 мН. Твердость покрытия достигает 20 ГПа. Толщина пленки - 600 нм. Спектроскопические исследования показали, что максимум пропускания германия с односторонним a-C:H покрытием - 67 % на длине волны 5 мкм, а монокристаллического Ge - 51 %. Результаты работы могут быть использованы при создании защитных просветляющих покрытий оптических систем, создании медицинских имплантов и в механических устройствах.</p></abstract><trans-abstract xml:lang="en"><p>A method for the synthesis of amorphous hydrogenated (a-C:H) carbon films with high adhesion is proposed, based on the implantation of carbon ions into a monocrystalline germanium substrate. The flow of ionized carbon was created by an anode layer ion source in crossed electric and magnetic fields. Propane gas was introduced into the area with an increased electron concentration. The gas flow rate was ranged from 4.5 to 10 cm3/min. Ionized fragments of propane, including carbon, were accelerated by the electric field and deposited on the substrate. At the same time, ionized carbon penetrated into the surface layer of germanium, creating a interlayer that provides adhesion of the film. The substrate was sputtered by argon ions for several minutes. The synthesis of the coating includes two-stage deposition. At the first stage, the films were deposited by an ion beam with a mean energy of about 1.6 keV for 0.5 to 1 hour to obtain an adhesive interlayer. Then the mean energy of the beam was reduced to 0.3 keV and the deposition continued for 3.5 hours to maintain the hardness of the coatings. The coating growth rate was ranged from 0.3 to 1.3 Å/sec. Adhesion, the bond between the coating and the substrate, obtained is high: there is no detachment while scratching by the Berkovich diamond nanoindent with a load of up to 50 mn. The hardness is 20 GPa. The film thickness is 600 nm. Spectroscopic studies have shown that the maximum transmission of the germanium with a single side a-C:H coating is 67 % at a wavelength of 5 µm, and of the single crystal Ge is 51 %. The results of the current research can be applyed in the formation of protective antireflective coatings of optical systems, the creation of medical implants and mechanical devices.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>аморфные углеродные гидрогенизированные пленки</kwd><kwd>адгезия</kwd><kwd>просветляющие покрытия на германии</kwd></kwd-group><kwd-group xml:lang="en"><kwd>amorphous hydrogenated carbon films</kwd><kwd>adhesion</kwd><kwd>antireflection coatings on germanium</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Peng S. et al. Effects of the ion-beam voltage on the properties of the diamond-like carbon thin film prepared by ion-beam sputtering deposition. Chinese Physics B, 2015, vol. 24, no. 6, p. 067803.</mixed-citation><mixed-citation xml:lang="en">Peng S. et al. Effects of the ion-beam voltage on the properties of the diamond-like carbon thin film prepared by ion-beam sputtering deposition. Chinese Physics B, 2015, vol. 24, no. 6, p. 067803.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Ankit K. et al. Synthesis of high hardness IR optical coating using diamond-like carbon by PECVD at room temperature. Diamond and Related Materials, 2017, vol. 78, p. 39-43.</mixed-citation><mixed-citation xml:lang="en">Ankit K. et al. Synthesis of high hardness IR optical coating using diamond-like carbon by PECVD at room temperature. Diamond and Related Materials, 2017, vol. 78, p. 39-43.</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Lu Y. et al. Diamond-like carbon film with gradient germanium-doped buffer layer by pulsed laser deposition. Surface and Coatings Technology, 2018, vol. 337, p. 290-295.</mixed-citation><mixed-citation xml:lang="en">Lu Y. et al. Diamond-like carbon film with gradient germanium-doped buffer layer by pulsed laser deposition. Surface and Coatings Technology, 2018, vol. 337, p. 290-295.</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Ismail R. A. et al. Synthesis of diamond-like carbon films by electro-deposition technique for solar cell applications. Optical and Quantum Electronics, 2016, vol. 48, no. 1, p. 16.</mixed-citation><mixed-citation xml:lang="en">Ismail R. A. et al. Synthesis of diamond-like carbon films by electro-deposition technique for solar cell applications. Optical and Quantum Electronics, 2016, vol. 48, no. 1, p. 16.</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Grill A. Electrical and optical properties of diamond-like carbon. Thin Solid Films, 1999, vol. 355, p. 189.</mixed-citation><mixed-citation xml:lang="en">Grill A. Electrical and optical properties of diamond-like carbon. Thin Solid Films, 1999, vol. 355, p. 189.</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">Xu J. et al. Influence of electric field on laser damage properties of DLC films by unbalanced magnetron sputtering. Applied Surface Science, 2013, vol. 265, p. 234-238.</mixed-citation><mixed-citation xml:lang="en">Xu J. et al. Influence of electric field on laser damage properties of DLC films by unbalanced magnetron sputtering. Applied Surface Science, 2013, vol. 265, p. 234-238.</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">Hakovirta M. et al. Correlation of carbon ion energy with sp2sp3 ratio in amorphous diamond films produced with a mass-separated ion beam. Physics Letters A, 1995, vol. 205, no. 4, p. 287-289.</mixed-citation><mixed-citation xml:lang="en">Hakovirta M. et al. Correlation of carbon ion energy with sp2sp3 ratio in amorphous diamond films produced with a mass-separated ion beam. Physics Letters A, 1995, vol. 205, no. 4, p. 287-289.</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">Kim W. R. et al. Effect of voltage on diamond-like carbon thin film using linear ion source. Surface and Coatings Technology, 2014, vol. 243, p. 15-19.</mixed-citation><mixed-citation xml:lang="en">Kim W. R. et al. Effect of voltage on diamond-like carbon thin film using linear ion source. Surface and Coatings Technology, 2014, vol. 243, p. 15-19.</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">Shevchenko E. F. et al. Diamond-like carbon film deposition using DC ion source with cold hollow cathode. Advances in Materials Science and Engineering, 2014, vol. 2014.</mixed-citation><mixed-citation xml:lang="en">Shevchenko E. F. et al. Diamond-like carbon film deposition using DC ion source with cold hollow cathode. Advances in Materials Science and Engineering, 2014, vol. 2014.</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">Suschke K. et al. High energy radial deposition of diamond-like carbon coatings. Coatings, 2015, vol. 5, no. 3, p. 326-337.</mixed-citation><mixed-citation xml:lang="en">Suschke K. et al. High energy radial deposition of diamond-like carbon coatings. Coatings, 2015, vol. 5, no. 3, p. 326-337.</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">Murmu P. P. et al. A novel radial anode layer ion source for inner wall pipe coating and materials modification - hydrogenated diamond-like carbon coatings from butane gas. Review of Scientific Instruments, 2014, vol. 85, no. 8, p. 085118.</mixed-citation><mixed-citation xml:lang="en">Murmu P. P. et al. A novel radial anode layer ion source for inner wall pipe coating and materials modification - hydrogenated diamond-like carbon coatings from butane gas. Review of Scientific Instruments, 2014, vol. 85, no. 8, p. 085118.</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">Tompkins H. G., Irene E. A. (eds.). Handbook of Ellipsometry. New York, William Andrew Publ., 2005, 892 p.</mixed-citation><mixed-citation xml:lang="en">Tompkins H. G., Irene E. A. (eds.). Handbook of Ellipsometry. New York, William Andrew Publ., 2005, 892 p.</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">Tolmachev V. A. Adsorption-ellipsometry method of studying the optical profile, thickness, and porosity of thin films. Journal of Optical Technology, 1999, vol. 66, no. 7, p. 596.</mixed-citation><mixed-citation xml:lang="en">Tolmachev V. A. Adsorption-ellipsometry method of studying the optical profile, thickness, and porosity of thin films. Journal of Optical Technology, 1999, vol. 66, no. 7, p. 596.</mixed-citation></citation-alternatives></ref><ref id="cit14"><label>14</label><citation-alternatives><mixed-citation xml:lang="ru">Korsunsky A. M. et al. On the hardness of coated systems. Surface and Coatings Technology, 1998, vol. 99, no. 1-2, p. 171-183.</mixed-citation><mixed-citation xml:lang="en">Korsunsky A. M. et al. On the hardness of coated systems. Surface and Coatings Technology, 1998, vol. 99, no. 1-2, p. 171-183.</mixed-citation></citation-alternatives></ref><ref id="cit15"><label>15</label><citation-alternatives><mixed-citation xml:lang="ru">Gibbons J. F., Johnson W. S., Hylroic S. W. Projected Range Statistics: Semiconductors and Related Materials. 2nd ed. Stroudsbury, PA, Halsted Press, 1975, 93 p.</mixed-citation><mixed-citation xml:lang="en">Gibbons J. F., Johnson W. S., Hylroic S. W. Projected Range Statistics: Semiconductors and Related Materials. 2nd ed. Stroudsbury, PA, Halsted Press, 1975, 93 p.</mixed-citation></citation-alternatives></ref><ref id="cit16"><label>16</label><citation-alternatives><mixed-citation xml:lang="ru">Nusupov K. K. et al. Structural studies of thin silicon layers repeatedly implanted by carbon ions. Physics of the Solid State, 2006, vol. 48, no. 7, p. 1255-1267.</mixed-citation><mixed-citation xml:lang="en">Nusupov K. K. et al. Structural studies of thin silicon layers repeatedly implanted by carbon ions. Physics of the Solid State, 2006, vol. 48, no. 7, p. 1255-1267.</mixed-citation></citation-alternatives></ref><ref id="cit17"><label>17</label><citation-alternatives><mixed-citation xml:lang="ru">Ferrari A. C., Robertson J. Interpretation of Raman spectra of disordered and amorphous carbon. Physical Review B, 2000, vol. 61, no. 20, p. 14095.</mixed-citation><mixed-citation xml:lang="en">Ferrari A. C., Robertson J. Interpretation of Raman spectra of disordered and amorphous carbon. Physical Review B, 2000, vol. 61, no. 20, p. 14095.</mixed-citation></citation-alternatives></ref><ref id="cit18"><label>18</label><citation-alternatives><mixed-citation xml:lang="ru">Casiraghi C., Ferrari A. C., Robertson J. Raman spectroscopy of hydrogenated amorphous carbons. Physical Review B, 2005, vol. 72, no. 8, p. 085401.</mixed-citation><mixed-citation xml:lang="en">Casiraghi C., Ferrari A. C., Robertson J. Raman spectroscopy of hydrogenated amorphous carbons. Physical Review B, 2005, vol. 72, no. 8, p. 085401.</mixed-citation></citation-alternatives></ref><ref id="cit19"><label>19</label><citation-alternatives><mixed-citation xml:lang="ru">Robertson J. Diamond-like amorphous carbon. Materials Science and Engineering: Reports, 2002, vol. 37, no. 4-6, p. 129-281.</mixed-citation><mixed-citation xml:lang="en">Robertson J. Diamond-like amorphous carbon. Materials Science and Engineering: Reports, 2002, vol. 37, no. 4-6, p. 129-281.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
