nguphysСибирский физический журналSIBERIAN JOURNAL OF PHYSICS2541-9447Новосибирский государственный университет10.25205/2541-9447-2018-13-4-60-66nguphys-64Research ArticleФИЗИКА ТВЕРДОГО ТЕЛА, ПОЛУПРОВОДНИКОВ, НАНОСТРУКТУРSOLID-STATE AND SEMICONDUCTOR PHYSICS, PHYSICS OF NANOSTRUCTURESПерераспределение атомных ступеней на поверхности кремния (001) при сублимации в условиях нагрева постоянным электрическим токомRearrangement of Atomic Steps on the Silicon (001) Surface at Sublimation under Heating by Direct Electric CurrentРодякинаЕ. Е.RodyakinaE. E.rodyakina@isp.nsc.ruСитниковС. В.SitnikovS. V.sitnikov@isp.nsc.ruРогилоД. И.RogiloD. I.rogilo@isp.nsc.ruЛатышевА. В.LatyshevA. V.latyshev@isp.nsc.ruИнститут физики полупроводников им. А. В. Ржанова СО РАН; Новосибирский государственный университетРоссияA. V. Rzhanov Institute of Semiconductor Physics SB RAS; Novosibirsk State UniversityRussian FederationИнститут физики полупроводников им. А. В. Ржанова СО РАНРоссияA. V. Rzhanov Institute of Semiconductor Physics SB RASRussian Federation2018261020201346066Copyright © Родякина Е.Е., Ситников С.В., Рогило Д.И., Латышев А.В., 20202020Родякина Е.Е., Ситников С.В., Рогило Д.И., Латышев А.В.Rodyakina E.E., Sitnikov S.V., Rogilo D.I., Latyshev A.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nguphys.elpub.ru/jour/article/view/64

Методами in situ сверхвысоковакуумной отражательной электронной микроскопии и ex situ атомно-силовой микроскопии исследовано объединение атомных ступеней в эшелоны (группы близкорасположенных ступеней) в условиях электромиграции, инициированной нагревом образца путем пропускания постоянного электрического тока, на поверхности кремния (001) при сублимации в интервале температур 950-1150 С. Показано, что изменение среднего расстояния между эшелонами атомных ступеней во времени зависит степенным образом, с показателем степени порядка 0,3. Получены данные о температурной зависимости числа эшелонов ступеней на единицу длины, образующихся за одно и то же время отжига в процессе сублимации. Обнаружена слабая зависимость от температуры при токе вниз по ступеням. Соответствующая эффективная энергия активации процесса эшелонирования при электрическом токе вверх по ступеням составила порядка 0,24 эВ.

The combining atomic steps into bunches (groups of closely spaced steps) under conditions of electromigration, induced by direct current sample heating, on silicon surface (001) during sublimation in the temperature range 950-1150°С is studied using in situ reflection electron microscopy and ex situ atomic force microscopy. It is shown that changes in the average distance between the atomic steps bunches in time depend in a power-law manner, with an exponent of about 0.3. The data on the temperature dependence of the number of steps bunches per unit length, formed during the same time of annealing in the process of sublimation, has been obtained. It has been found that the temperature dependence is week with step-down current. The corresponding effective activation energy of the bunching process is about 0.24 eV with step-up current.

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The authors declare that there are no conflicts of interest present.