nguphysСибирский физический журналSIBERIAN JOURNAL OF PHYSICS2541-9447Новосибирский государственный университет10.25205/2541-9447-2023-18-3-71-82nguphys-275Research ArticleФИЗИКА ТВЕРДОГО ТЕЛА, ПОЛУПРОВОДНИКОВ, НАНОСТРУКТУРSOLID-STATE AND SEMICONDUCTOR PHYSICS, PHYSICS OF NANOSTRUCTURESЭлектрические и оптические переключения в наноструктурах диоксида ванадия, декорированных наночастицами золотаElectrical and Optical Switching in Vanadium Dioxide Nanostructures Decorated with Gold Nanoparticleshttps://orcid.org/0000-0001-7666-5138МутилинС. В.MutilinS. V.

Сергей Владимирович Мутилин, кандидат физико-математических наук

Новосибирск

Sergey V. Mutilin, Ph.D. (Physics and Mathematics) 

Novosibirsk

mutilin@isp.nsc.ruhttps://orcid.org/0000-0001-5824-1972ГайдукА. Е.GaydukА. Е.

Алексей Евгеньевич Гайдук, кандидат физико-математических наук

Новосибирск

Alexey E. Gayduk, Ph.D. (Physics and Mathematics)

Novosibirsk

aegayduk@isp.nsc.ruhttps://orcid.org/0000-0001-8916-7453ЯковкинаЛ. В.YakovkinaL. V.

Любовь Владимировна Яковкина, кандидат химических наук

Новосибирск

Lyubov V. Yakovkina, Ph.D. (Chemistry) 

Novosibirsk

yakovk@niic.nsc.ruhttps://orcid.org/0000-0001-8065-6445КомоновА. И.KomonovА. I.

Александр Иванович Комонов, инженер

Новосибирск

Alexander I. Komonov, Engineer 

Novosibirsk

komonov@isp.nsc.ruhttps://orcid.org/0000-0002-5887-5323СоотсР. А.SootsR. А.

Регина Альфредовна Соотс, ведущий инженер

Новосибирск

Regina A. Soots, Leading Engineer

Novosibirsk

soots@isp.nsc.ruhttps://orcid.org/0000-0003-2646-0008КапогузовК. Е.KapoguzovК. Е.

Кирилл Евгеньевич Капогузов, младший научный сотрудник 

Новосибирск

Kirill E. Kapoguzov, Junior Researcher

Novosibirsk

k.kapoguzov@isp.nsc.ruhttps://orcid.org/0000-0002-4004-6842ГолодС. В.GolodS. V

Сергей Владиславович Голод, кандидат физико-математических наук

Новосибирск

Sergey V. Golod, Ph.D. (Physics and Mathematics)

Novosibirsk

golod@isp.nsc.ruhttps://orcid.org/0000-0003-3275-2437ПринцВ. Я.PrinzV. Ya.

Виктор Яковлевич Принц, доктор физико-математических наук, член-корреспондент РАН

Новосибирск

Victor Ya. Prinz, Doctor of Science (Physics and Mathematics), Corresponding member of the RAS

Novosibirsk

prinz@isp.nsc.ruИнститут физики полупроводников им. А. В. Ржанова СО РАНРоссияA.V. Rzhanov Institute of Semiconductor Physics SB RASRussian FederationИнститут неорганической химии им. А. В. Николаева СО РАНРоссияA.V. Nikolaev Institute of Inorganic Chemistry SB RASRussian Federation2023220220241837182Copyright © Мутилин С.В., Гайдук А.Е., Яковкина Л.В., Комонов А.И., Соотс Р.А., Капогузов К.Е., Голод С.В., Принц В.Я., 20242024Мутилин С.В., Гайдук А.Е., Яковкина Л.В., Комонов А.И., Соотс Р.А., Капогузов К.Е., Голод С.В., Принц В.Я.Mutilin S.V., Gayduk А.Е., Yakovkina L.V., Komonov А.I., Soots R.А., Kapoguzov К.Е., Golod S.V., Prinz V.Y.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nguphys.elpub.ru/jour/article/view/275

В работе изучены электрические параметры фазового перехода полупроводник–металл в наноструктурах диоксида ванадия, синтезированных с помощью химического осаждения из газовой фазы на подложке кремния (100) и декорированных золотыми наночастицами с поверхностной концентрацией от 3∙109 до 3∙1010 см–2. Методом рентгенофазного анализа установлено, что синтезированные наноструктуры диоксида ванадия содержат моноклинную М1-фазу, испытывающую фазовый переход при температуре около 68 °С. При помощи сканирующего электронного микроскопа и атомно-силового микроскопа исследована морфология поверхности наноструктур диоксида ванадия, покрытых золотыми наночастицами. Определены характеристики температурного фазового перехода исходных наноструктур и наноструктур, декорированных наночастицами золота. Температурная зависимость сопротивления вблизи точки фазового перехода исходных наноструктур показала, что скачок сопротивлений составляет около четырех порядков по величине, что подтверждает их высокое качество. Показано, что увеличение поверхностной концентрации золотых частиц до значения 3∙1010 см–2 увеличивает проводимость диоксида ванадия при комнатной температуре примерно в два раза, а температуру фазового перехода сдвигает на 5 °С: с 68 до 63 °С. Методами численного моделирования рассмотрены оптические переключения в диоксиде ванадия с массивом золотых частиц с размером 9 нм. Установлено, что отклик электромагнитной волны от материала VO2 при фазовом переходе усиливается за счет возбуждения локализованного плазмонного резонанса в золотых наночастицах и достигает локального максимума в районе 600 нм. Дополнительно, данный эффект усиливается при углах падения в районе угла псевдо-Брюстера для диоксида ванадия. Рассмотренные гибридные наноструктуры VO2–Au перспективны в качестве базовых наноэлементов для компьютеров нового поколения, а также для сверхбыстрых и высокочувствительных сенсоров.

The electrical parameters of the semiconductor-metal phase transition in vanadium dioxide nanostructures synthesized by chemical vapor deposition on a silicon substrate (100) and decorated with gold nanoparticles with a surface concentration from 3∙109 to 3∙1010 cm–2 are studied. X-ray phase analysis revealed that the synthesized nanostructures of vanadium dioxide contain a monoclinic M1 phase undergoing a phase transition at a temperature of about 68 °C. The morphology of the surface of vanadium dioxide nanostructures coated with gold nanoparticles was studied using a scanning electron microscope and an atomic force microscope. The characteristics of the temperature phase transition of the initial nanostructures and nanostructures decorated with gold nanoparticles are determined. The temperature dependence of the resistance near the phase transition point of the initial nanostructures showed that the resistance jump is about four orders of magnitude, which confirms their high quality. It is shown that an increase in the surface concentration of gold particles to a value of 3∙1010 cm–2 increases the conductivity of vanadium dioxide at room temperature by about two times, and shifts the phase transition temperature by 5 °C: from 68 °C to 63 °C. Optical switching in vanadium dioxide with an array of gold particles with a size of 9 nm is considered by numerical modeling methods. It is established that the response of the electromagnetic wave from the VO2 material during the phase transition is enhanced due to the excitation of localized plasmon resonance in gold nanoparticles and reaches a local maximum in the region of 600 nm. Additionally, this effect is enhanced at angles of incidence near the pseudo-Brewster angle for vanadium dioxide. The considered hybrid VO2–Au nanostructures are promising as basic nanoelements for next-generation computers, as well as for ultrafast and highly sensitive sensors.

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The authors declare that there are no conflicts of interest present.